FIELD-ENHANCED EMISSION AND CAPTURE IN POLYSILICON PN JUNCTIONS

[1] Card H. C., 1983, International Electron Devices Meeting 1983. Technical Digest, P198

[2] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 67 - 71

[3] THERMIONIC-FIELD EMISSION FROM INTERFACE STATES AT GRAIN-BOUNDARIES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 312 - 317

[4] CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .1. THEORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1365 - 1369

[5] CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .2. EXPERIMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1370 - 1376

[6] TEMPERATURE-DEPENDENCE OF THE NONIDEAL COMPONENT OF BASE CURRENT IN MICROPOWER N-P-N TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1503 - 1505

[7] GREVE DW, 1983, SEMICONDUCTOR RES CO

[8] LEFFERTS RB, 1982, IEEE ISSCC, V16

[9] LEFFERTS RB, 1981, G5613 ICL STANF U TE

[10] MULLER RS, 1977, DEVICE ELECTRONICS I

[1] Card H. C., 1983, International Electron Devices Meeting 1983. Technical Digest, P198

[2] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 67 - 71

[3] THERMIONIC-FIELD EMISSION FROM INTERFACE STATES AT GRAIN-BOUNDARIES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 312 - 317

[4] CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .1. THEORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1365 - 1369

[5] CHARGE EMISSION FROM INTERFACE STATES AT SILICON GRAIN-BOUNDARIES BY THERMAL EMISSION AND THERMIONIC-FIELD EMISSION .2. EXPERIMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1370 - 1376

[6] TEMPERATURE-DEPENDENCE OF THE NONIDEAL COMPONENT OF BASE CURRENT IN MICROPOWER N-P-N TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1503 - 1505

[7] GREVE DW, 1983, SEMICONDUCTOR RES CO

[8] LEFFERTS RB, 1982, IEEE ISSCC, V16

[9] LEFFERTS RB, 1981, G5613 ICL STANF U TE

[10] MULLER RS, 1977, DEVICE ELECTRONICS I