Comparative study of PbI2 and HgI2 as direct detector materials for high resolution X-ray image sensors

被引：36

作者：

Street, RA ^{[1
]}

Mulato, M ^{[1
]}

Schieber, M ^{[1
]}

Hermon, H ^{[1
]}

Shah, K ^{[1
]}

Bennett, P ^{[1
]}

Dmitryev, Y ^{[1
]}

Ho, J ^{[1
]}

Lau, R ^{[1
]}

Meerson, E ^{[1
]}

Ready, SE ^{[1
]}

Reisman, B ^{[1
]}

Sado, Y ^{[1
]}

VanSchuylenbergh, K ^{[1
]}

Vilensky, A ^{[1
]}

Zuck, A ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

MEDICAL IMAGING 2001: PHYSICS OF MEDICAL IMAGING | 2001年 / 4320卷

关键词：

lead iodide; mercuric iodide; direct detection;

D O I：

10.1117/12.430858

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

X-ray imaging properties are reported for HgI2 and PbI2, as candidate materials for future direct detection x-ray image sensors, including the first results from screen-printed HgI2 arrays. The leakage current of PbI2 is reduced by using new deposition conditions, but is still larger than HgI2. Both HgI2 and PbI2 have high spatial resolution but new data shows that the residual image spreading of PbI2 is not due to k-edge fluorescence and its possible origin is discussed. HgI2 has substantially higher sensitivity than PbI2 at comparable bias voltages, and we discuss the various loss mechanisms. Unlike PbI2, HgI2 shows a substantial spatially non-uniform response that is believed to originate from the large grain size, which is comparable to the pixel size. We obtain zero spatial frequency DQE values of 0.7-0.8 with PbI2 under low energy exposure conditions. A model for signal generation in terms of the semiconducting properties of the materials is presented.

引用

页码：1 / 12

页数：12

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