Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1-x)O3 films on Ir/(100)(ZrO2)1-x(Y2O3)x/(100)Si structures

被引：5

作者：

Horita, S ^{[1
]}

Horii, S ^{[1
]}

Nakajima, H ^{[1
]}

Umemoto, S ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

THIN SOLID FILMS | 2001年 / 388卷 / 1-2期

关键词：

epitaxy; ferroelectric properties; lead oxide; sputtering;

D O I：

10.1016/S0040-6090(01)00829-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

PZT films were deposited on the epitaxial Ir/(100)(ZrO2)(1-x)(Y2O3)(x)/(100)Si structures by sputtering. On the epitaxial (100) and the (100) + (111) Ir films, the tetragonal (001) PZT films were heteroepitaxially grown with a cube-on-cube relationship. Also, on the epitaxial (111) Ir film, the tetragonal (111) epitaxial PZT film was grown with quadruple domain. The crystalline quality of the epitaxial (001) PZT film was much better than that of the epitaxial (111) PZT film. The leakage and P-E characteristics of the epitaxial (001) PZT film on the (100) Ir film was superior to the (001) PZT film on the (100)+(111) Ir film and to the (111) PZT film. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：260 / 270

页数：11

共 29 条

[1] Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O-3 sol-gel derived thin films [J].

Brooks, KG ;

Klissurska, RD ;

Moeckli, P ;

Setter, N .

JOURNAL OF MATERIALS RESEARCH, 1997, 12 (02) :531-540

[2] Comparative role of metal-organic decomposition-derived [100] and [111] in electrical properties of Pb(Zr,Ti)O-3 thin films [J].

Chen, SY ;

Chen, IW .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7A) :4451-4458

[3]

Chu F, 1998, MATER RES SOC SYMP P, V493, P409

[4] Structural and electrical characterization of heteroepitaxial lead zirconate titanate thin films [J].

deKeijser, M ;

Cillessen, JFM ;

Janssen, RBF ;

DeVeirman, AEM ;

deLeeuw, DM .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :393-402

[5] Single-crystal Pb(ZrxTi1-x)O-3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties [J].

Foster, CM ;

Bai, GR ;

Csencsits, R ;

Vetrone, J ;

Jammy, R ;

Wills, LA ;

Carr, E ;

Amano, J .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2349-2357

[6] Relative coherency strain and phase transformation history in epitaxial ferroelectric thin films [J].

Foster, CM ;

Pompe, W ;

Daykin, AC ;

Speck, JS .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) :1405-1415

[7] EFFECT OF ZR/TI RATIO ON CRYSTAL-STRUCTURE OF THIN LEAD-ZIRCONATE-TITANATE FILMS PREPARED BY REACTIVE SPUTTERING [J].

FUJISAWA, A ;

FURIHATA, M ;

MINEMURA, I ;

ONUMA, Y ;

FUKAMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4048-4051

[8] MICROSTRUCTURE OF EPITAXIAL OXIDE THIN-FILM HETEROSTRUCTURES ON SILICON BY PULSED-LASER DEPOSITION [J].

GHONGE, SG ;

GOO, E ;

RAMESH, R ;

HAAKENAASEN, R ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1994, 64 (25) :3407-3409

[9] PREPARATION OF PB(ZR, TI)O-3 THIN-FILMS BY MULTITARGET SPUTTERING [J].

HASE, T ;

HIRATA, K ;

AMANUMA, K ;

HOSOKAWA, N ;

MIYASAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5244-5248

[10] Crystal and electrical characterizations of oriented yttria-stabilized zirconia buffer layer for the metal/ferroelectric/insulator/semiconductor field-effect transistor [J].

Hirai, T ;

Teramoto, K ;

Nagashima, K ;

Koike, H ;

Matsuno, S ;

Tanimoto, S ;

Tarui, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07) :4016-4020

← 1 2 3 →