Direct observation of the two-stage excitation mechanism of Er in Si

被引:40
作者
Tsimperidis, I
Gregorkiewicz, T
Bekman, HHPT
Langerak, CJGM
机构
[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
[2] TNO, Phys & Elect Lab, NL-2509 JG The Hague, Netherlands
[3] EURATOM, FOM, Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[4] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
关键词
D O I
10.1103/PhysRevLett.81.4748
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In Er-doped silicon we have found direct evidence for the formation of the Er-related intermediate state that is a precursor of the final 4f-electron excited state responsible fur the 0.8 eV luminescence. Time-resolved photoluminescence following band-gap illumination shows disruption of this center by a THz pulse from a free-electron laser. The decay of the intermediate state could be directly monitored in this double-beam experiment and a lifetime of approximately 100 mu s has been found. Tn this way the most characteristic step in die excitation mechanism of the Er ion in silicon has been revealed experimentally. [S0031-9007(98)07761-8].
引用
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页码:4748 / 4751
页数:4
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