Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate

被引：7

作者：

Jiang, Yang ^{[1
]}

Jia, Haiqiang ^{[1
]}

Wang, Wenxin ^{[1
]}

Wang, Lu ^{[1
]}

Chen, Hong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matters, Beijing 100190, Peoples R China

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2011年 / 4卷 / 08期

关键词：

LATERAL EPITAXIAL OVERGROWTH; DENSITY GAN; FILMS; TILT;

D O I：

10.1039/c0ee00792g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new GaN lateral epitaxial overgrowth (LEO) technique using a chemical-etched grooved sapphire substrate is demonstrated here. The substrate fabrication, selective growth mechanism and dislocation reduction mechanism are discussed. By applying this technique, improvement in the quality of wing tilt free GaN LEO films and enhancement of GaN LEDs can be achieved.

引用

页码：2625 / 2629

页数：5

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