Electrical characteristics of poly (3-hexylthiophene) thin film transistors printed and spin-coated on plastic substrates

被引：49

作者：

Park, SK ^{[1
]}

Kim, YH ^{[1
]}

Han, JI ^{[1
]}

Moon, DG ^{[1
]}

Kim, WK ^{[1
]}

Kwak, MG ^{[1
]}

机构：

[1] Korea Elect Technol Inst, Informat Display Res Ctr, Pyongtaek, Kyunggi, South Korea

来源：

SYNTHETIC METALS | 2003年 / 139卷 / 02期

关键词：

poly (3-hexylthiophene); thin film transistor (TFT); spin-coating;

D O I：

10.1016/S0379-6779(03)00195-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Poly (3-hexylthiophene) (P3HT)-based thin film transistors (TFTs) array was fabricated on plastic substrates with O-2 plasma treatment and solution-based processes. Both the changes of hole Schottky barrier height and surface roughness of the gate insulators are supposed to account for the increased carrier mobility and charge carrying ability of the plasma treated devices. Additionally, polymer active layers formed by contact printing and spin-coating methods have been analyzed, which revealed that the electrical properties are different from the semiconductor growth mechanism. Based on the experiments, we fabricated P3HT TFTs array with 0.02-0.025 cm(2)/V s in saturation carrier mobility and on/off current ratio about 10(3)-10(4) on polycarbonate (PC) substrates. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：377 / 384

页数：8

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