Ion projection lithography:: status of tool and mask developments

被引:8
作者
Kaesmaier, R [1 ]
Ehrmann, A
Löschner, H
机构
[1] Infineon Technol AG, Munich, Germany
[2] IMS, Ionen Mikrofabrikat Syst GmbH, A-1020 Vienna, Austria
关键词
next generation lithography; ion projection lithography; stencil mask;
D O I
10.1016/S0167-9317(01)00506-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As part of the European MEDEA project on ion projection lithography (IPL), the ion optical system of a process development tool (PDT-IOS) has been designed and integrated at IMS Vienna. The ion optics system (PDT-IOS) includes in situ metrology systems. The different PDT-IOS subsystems, including in situ diagnostics and metrology, were switched on in the fourth quarter of 2000 so that detailed testing should start in the first quarter of 2001. In parallel to integration of the PDT ion optics, a test bench for a vertical vacuum wafer stage has been realized by Leica. Operation of magnetic bearing supported stage movement has already been demonstrated. An ASML vacuum-compatible optical wafer alignment system has been integrated to this stage test bench system recently. In air, an X/Y alignment repeatability of less than 3 mn (3 sigma) has been shown. Parallel to the IPL tool activities, intensive development of IPL stencil masks is ongoing at Infineon Technologies Mask House and the Institute for Microelectronics Stuttgart with success in producing 150 and 200 mm stencil masks. An overview of the stencil mask development is provided. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:145 / 153
页数:9
相关论文
共 9 条
[1]   PN and SOI wafer flow process for stencil mask fabrication [J].
Butschke, J ;
Ehrmann, A ;
Haugeneder, E ;
Irmscher, M ;
Käsmaier, R ;
Kragler, K ;
Letzkus, F ;
Löschner, H ;
Mathuni, J ;
Rangelow, IW ;
Reuter, C ;
Shi, F ;
Springer, R .
15TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS '98, 1999, 3665 :20-29
[2]   Stencil mask technology for ion beam lithography [J].
Ehrmann, A ;
Huber, S ;
Käsmaier, R ;
Oelmann, A ;
Struck, T ;
Springer, R ;
Butschke, J ;
Letzkus, F ;
Kragler, K ;
Löschner, H ;
Rangelow, I .
18TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1998, 3546 :194-205
[3]   Stencil mask key parameter measurement and control [J].
Ehrmann, A ;
Elsner, A ;
Liebe, R ;
Struck, T ;
Butschke, J ;
Letzkus, F ;
Irmscher, M ;
Springer, R ;
Haugeneder, E ;
Löschner, H .
EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 :373-384
[4]   Pattern Specific Emulation (PSE) for ion-beam projection lithography masks using finite element analysis [J].
Fisher, AH ;
Engelstad, RL ;
Lovell, EG .
EMERGING LITHOGRAPHIC TECHNOLOGIES II, 1998, 3331 :559-567
[5]   Layout post processing in the ion projection lithography (IPL) [J].
Hartmann, H ;
Petraschenko, A ;
Schunk, S ;
Steinmetz, R ;
Haugeneder, E ;
Löschner, H .
16TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2000, 3996 :105-107
[6]  
KAESMAIER R, 2000, P SOC PHOTO-OPT INS, V3997, P1
[7]  
Lee Y., 1999, Proceedings of the 1999 Particle Accelerator Conference (Cat. No.99CH36366), P2575, DOI 10.1109/PAC.1999.792782
[8]   Dry etch improvements in the SOI Wafer Flow Process for IPL stencil mask fabrication [J].
Letzkus, F ;
Butschke, J ;
Höfflinger, B ;
Irmscher, M ;
Reuter, C ;
Springer, R ;
Ehrmann, A ;
Mathuni, J .
MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :609-612
[9]  
LOSCHNER H, 1999, UNPUB INT SEMATECH N