Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks

被引:386
作者
Kroemer, H [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1103/RevModPhys.73.783
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
[No abstract available]
引用
收藏
页码:783 / 793
页数:11
相关论文
共 48 条
[1]   Electronic properties of Si/SiGe/Ge heterostructures [J].
Abstreiter, G .
PHYSICA SCRIPTA, 1996, T68 :68-71
[3]  
ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573
[4]   Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology [J].
Alferov, ZI .
REVIEWS OF MODERN PHYSICS, 2001, 73 (03) :767-782
[5]   GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].
ANDERSON, RL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :283-287
[6]   PROPERTIES OF (GE2)X(GAAS)1-X ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].
BANERJEE, I ;
CHUNG, DW ;
KROEMER, H .
APPLIED PHYSICS LETTERS, 1985, 46 (05) :494-496
[7]   OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES [J].
BROWN, ER ;
SODERSTROM, JR ;
PARKER, CD ;
MAHONEY, LJ ;
MOLVAR, KM ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2291-2293
[8]   STAGGERED-LINEUP HETEROJUNCTIONS AS SOURCES OF TUNABLE BELOW-GAP RADIATION - EXPERIMENTAL-VERIFICATION [J].
CAINE, EJ ;
SUBBANNA, S ;
KROEMER, H ;
MERZ, JL ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1123-1125
[9]  
Casey Jr. C.H., 1978, HETEROSTRUCTURE LASE
[10]   POSSIBILITY OF HETEROSTRUCTURE BAND OFFSETS AS BULK PROPERTIES - TRANSITIVITY RULE AND ORIENTATION EFFECTS [J].
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1988, 38 (17) :12687-12690