Electronic properties of Si/SiGe/Ge heterostructures

被引：4

作者：

Abstreiter, G

机构：

来源：

PHYSICA SCRIPTA | 1996年 / T68卷

关键词：

D O I：

10.1088/0031-8949/1996/T68/009

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High mobility electron and hole channels have been achieved in selectively doped strained Si and Ge layers, respectively. Electronic transport properties of such structures are discussed.

引用

页码：68 / 71

页数：4

共 34 条

[1]

ABSTEITER G, IN PRESS SEMICOND SC

[2] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[3] SILICON/GERMANIUM QUANTUM STRUCTURES [J].

ABSTREITER, G .

SOLID STATE COMMUNICATIONS, 1994, 92 (1-2) :5-10

[4] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R ;

MOORE, AR ;

HERMAN, F .

PHYSICAL REVIEW, 1958, 109 (03) :695-710

[5] VALENCE-BAND OFFSETS AT STRAINED SI/GE INTERFACES [J].

COLOMBO, L ;

RESTA, R ;

BARONI, S .

PHYSICAL REVIEW B, 1991, 44 (11) :5572-5579

[6] HIGH-MOBILITY 2-D HOLE GASES IN STRAINED GE CHANNELS ON SI SUBSTRATES STUDIED BY MAGNETOTRANSPORT AND CYCLOTRON-RESONANCE [J].

ENGELHARDT, CM ;

TOBBEN, D ;

ASCHAUER, M ;

SCHAFFLER, F ;

ABSTREITER, G ;

GORNIK, E .

SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :949-952

[7] 2-DIMENSIONAL HOLE GAS IN SI/SIGE HETEROSTRUCTURES [J].

FANG, FF ;

WANG, PJ ;

MEYERSON, BS ;

NOCERA, JJ ;

ISMAIL, KE .

SURFACE SCIENCE, 1992, 263 (1-3) :175-178

[8] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].

FITZGERALD, EA ;

XIE, YH ;

GREEN, ML ;

BRASEN, D ;

KORTAN, AR ;

MICHEL, J ;

MII, YJ ;

WEIR, BE .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :811-813

[9]

HOLZMANN M, IN PRESS APPL SURFAC

[10]

HOLZMANN M, UNPUB

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