Electronic properties of Si/SiGe/Ge heterostructures

被引：4

作者：

Abstreiter, G

机构：

来源：

PHYSICA SCRIPTA | 1996年 / T68卷

关键词：

D O I：

10.1088/0031-8949/1996/T68/009

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High mobility electron and hole channels have been achieved in selectively doped strained Si and Ge layers, respectively. Electronic transport properties of such structures are discussed.

引用

页码：68 / 71

页数：4

共 34 条

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