Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots

被引：21

作者：

Crozier, PA ^{[1
]}

Catalano, M

Cingolani, R

Passaseo, A

机构：

[1] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[2] CNR, IME, I-73100 Lecce, Italy

[3] Univ Lecce, Dipartimento Ingn Innovaz, INFM, Unita Lecce, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 19期

关键词：

D O I：

10.1063/1.1415414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope. (C) 2001 American Institute of Physics.

引用

页码：3170 / 3172

页数：3

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