Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires

被引：10

作者：

Catalano, M

Taurino, A

Lomascolo, M

Vasanelli, L

De Giorgi, M

Passaseo, A

Rinaldi, R

Cingolani, R ^{[1
]}

Mauritz, O

Goldoni, G

Rossi, F

Molinari, E

Crozier, P

机构：

[1] Univ Lecce, Ist Nazl Fis Mat, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Ingn Innovaz, Ist CNR IME, CNR, I-73100 Lecce, Italy

[3] Univ Modena & Reggio Emilia, INFM, I-41100 Modena, Italy

[4] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy

[5] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 05期

关键词：

D O I：

10.1063/1.372170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].

引用

页码：2261 / 2264

页数：4

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