MOVPE growth of GaN and LED on (111) MgAl2O4

被引：1

作者：

Duan, SK

Teng, XG

Wang, YT

Li, GH

Jiang, HX

Han, P

Lu, DC

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Integrated Optoelect Lab, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

[4] Chinese Acad Sci, Beijing Lab Electron Microscopy, Ctr Condensed Matter, Beijing 100080, Peoples R China

[5] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; MgAl2O4; MOVPE; LED;

D O I：

10.1016/S0022-0248(98)00235-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：197 / 201

页数：5

共 8 条

[1]

Duan Shukun, 1997, Chinese Journal of Semiconductors, V18, P385

[2]

DUAN SK, 1995, ACTA PHOTONICA SINIC, V24, P105

[3] RAMAN-SCATTERING FROM LO PHONON-PLASMON COUPLED MODES IN GALLIUM NITRIDE [J].