Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique

被引：17

作者：

Wellmann, PJ ^{[1
]}

Schoenfeld, WV ^{[1
]}

Garcia, JM ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 09期

基金：

美国国家科学基金会;

关键词：

InAs quantum dots; ion implantation;

D O I：

10.1007/s11664-998-0158-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the tunability of up to 150 meV of the ground state transition of self-assembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T = 12K) of the quantum dot transition remains at 80% of its original value after implantation with a Mn dose of 1 x 10(13) cm(-2) ions. Strong luminescence still remains at room temperature. At a high implantation dose (1 x 10(15) cm(-2)) and rapid thermal annealing (700 degrees C for 60s) about 25% of the QD luminescence intensity is recovered at T = 12K.

引用

页码：1030 / 1033

页数：4

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