Low-temperature deposition of highly [100]-oriented MgO films using charged liquid cluster beam

被引:31
作者
Rhee, SH
Yang, Y
Choi, HS
Myoung, JM
Kim, K
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[3] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
MgO; CLCB; thin films; flat panel displays;
D O I
10.1016/S0040-6090(01)01183-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Charged liquid cluster beam (CLCB) of a precursor solution has been employed to deposit highly [100]-oriented MgO films with full oxygen content on Si (111) and glass in air at a very low temperature (less than or equal to 400 degreesC). Flow-limited field-injection electrostatic spraying was invoked to produce charged nanometer-size drops (liquid clusters) of the precursor solution. This solution was prepared by sol-gel processing of magnesium acetate in ethanol. The morphology, surface atomic ratio of Mg and O, and carbon impurity concentration of the films were studied using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering (RBS). The MgO films started to crystallize in the [100] direction below 300 degreesC and became more highly oriented with increasing temperature. Addition of triethyleneglycol to the precursor solution reduced the surface roughness of the films at high substrate temperatures. This technique is applicable to large-area coating. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:23 / 28
页数:6
相关论文
共 32 条
[21]   FABRICATION OF ZNO THIN-FILMS USING CHARGED LIQUID CLUSTER BEAM TECHNIQUE [J].
RYU, CK ;
KIM, K .
APPLIED PHYSICS LETTERS, 1995, 67 (22) :3337-3339
[22]   Growth of MgO on Si(100) and GaAs(100) by laser ablation [J].
Stampe, PA ;
Kennedy, RJ .
THIN SOLID FILMS, 1998, 326 (1-2) :63-66
[23]   X-ray characterization of MgO thin films grown by laser ablation on yttria-stabilized zirconia [J].
Stampe, PA ;
Kennedy, RJ .
JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) :472-477
[24]   GROWTH OF EPITAXIAL MGO FILMS ON SB-PASSIVATED (001)GAAS - PROPERTIES OF THE MGO/GAAS INTERFACE [J].
TARSA, EJ ;
WU, XH ;
IBBETSON, JP ;
SPECK, JS ;
ZINCK, JJ .
APPLIED PHYSICS LETTERS, 1995, 66 (26) :3588-3590
[25]   THIN-FILMS OF MAGNESIUM-OXIDE BY MODIFIED CVD - A BUFFER LAYER FOR HTCS FILMS [J].
VALLETREGI, M ;
LABEAU, M ;
GARCIA, E ;
CABANAS, MV ;
GONZALEZCALBET, JM ;
DELABOUGLISE, G .
PHYSICA C, 1991, 180 (1-4) :57-60
[26]   Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia [J].
Wang, CP ;
Do, KB ;
Beasley, MR ;
Geballe, TH ;
Hammond, RH .
APPLIED PHYSICS LETTERS, 1997, 71 (20) :2955-2957
[27]  
WEBER LF, 1985, FLAT PANEL DISPLAYS, P332
[28]   Stoichiometry and morphology of MgO films grown reactively on Ag(100) [J].
Wollschläger, J ;
Viernow, J ;
Tegenkamp, C ;
Erdös, D ;
Schröder, KM ;
Pfnür, H .
APPLIED SURFACE SCIENCE, 1999, 142 (1-4) :129-134
[29]   The formation of mosaics during the reactive growth of MgO films on Ag(100) [J].
Wollschlager, J ;
Erdos, D ;
Schroder, KM .
SURFACE SCIENCE, 1998, 402 (1-3) :272-276
[30]   PREPARATION, CHARACTERIZATION, AND CHEMICAL-PROPERTIES OF ULTRATHIN MGO FILMS ON MO(100) [J].
WU, MC ;
CORNEILLE, JS ;
HE, JW ;
ESTRADA, CA ;
GOODMAN, DW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1467-1471