Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

被引：28

作者：

Davis, J. A. ^{[1
]}

Dao, L. V. ^{[1
]}

Wen, X. ^{[1
]}

Ticknor, C. ^{[1
]}

Hannaford, P. ^{[1
]}

Coleman, V. A. ^{[2
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

Koike, K. ^{[3
]}

Sasa, S. ^{[3
]}

Inoue, M. ^{[3
]}

Yano, M. ^{[3
]}

机构：

[1] Swinburne Univ Technol, Ctr Atom Opt & Ultrafast Spect, Melbourne, Vic 3122, Australia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[3] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Asahi Ku, Osaka 5358585, Japan

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 05期

关键词：

D O I：

10.1088/0957-4484/19/05/055205

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron -hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.

引用

页数：4

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