Polarization fields in nitride nanostructures: 10 points to think about

被引：65

作者：

Bernardini, F ^{[1
]}

Fiorentini, V

机构：

[1] Univ Cagliari, Ist Nazl Fis Mat, Cagliari, Italy

[2] Univ Cagliari, Dipartimento Fis, Cagliari, Italy

来源：

APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期

关键词：

III-V nitrides; spontaneous polarization; piezoelectricity; quantum wells; HEMT;

D O I：

10.1016/S0169-4332(00)00434-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built-in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically 10 "propositions" aimed at clarifying the main controversial issues. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：23 / 29

页数：7

共 27 条

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