Epitaxial growth of ZnO nanocrystals at ZnWO4(0 1 0) cleaved surface

被引：31

作者：

Atuchin, V. V. ^{[1
]}

Galashov, E. N. ^{[2
]}

Kozhukhov, A. S. ^{[3
,4
]}

Pokrovsky, L. D. ^{[1
]}

Shlegel, V. N. ^{[2
]}

机构：

[1] SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] SB RAS, Inst Inorgan Chem, Novosibirsk 630090, Russia

[3] SB RAS, Lab Nanodiagnost & Nanolithog, Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Novosibirsk State Univ, Dept Phys, Novosibirsk 630090, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Topotaxy; Tungstate; Zinc compounds; RAY PHOTOELECTRON-SPECTROSCOPY; CORE-LEVEL SPECTROSCOPY; SINGLE-CRYSTALS; KTIOPO4; SURFACE; RHEED ANALYSIS; WAVE-GUIDES; PHOTOEMISSION; LINBO3; TIO2;

D O I：

10.1016/j.jcrysgro.2010.10.172

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Precipitation of ZnO nanocrystals with diameter of 30-50 nm and height of 1-7 nm at ZnWO4(0 1 0) atomically flat surface annealed at T=500 degrees C by t=3.6 ks is detected by AFM and RHEED analyses. The epitaxial relation is found as ZnWO4(0 1 0)//ZnO(-1 1 0). This effect can be used for fabrication of ZnO nanocrystals on dielectric substrate. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1147 / 1150

页数：4

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