Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate

被引：11

作者：

Cheng, CC ^{[1
]}

Chien, CH

Chen, CW

Hsu, SL

Yang, MY

Huang, CC

Yang, FL

Chang, CY

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Nano Device Lab, Hsinchu 300, Taiwan

[3] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

germanium; high-k gate dielectric; HfOxNy; post-deposition-annealing;

D O I：

10.1016/j.mee.2005.04.033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfOxNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 angstrom with a low leakage current of 1.8 x 10(-5) A/cm(2) at V-G = -1V was achieved after 600 degrees C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.

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页码：30 / 33

页数：4

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