Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3/Pb(Zr,Ti)O3 field effect devices -: art. no. 162512

被引：52

作者：

Thiele, C

Dörr, K

Schultz, L

Beyreuther, E

Lin, WM

机构：

[1] IFW Dresden, Inst Met Mat, D-01069 Dresden, Germany

[2] Tech Univ Dresden, Inst Appl Photophys, D-01062 Dresden, Germany

[3] Tech Univ Dresden, Inst Solid State Elect, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 16期

关键词：

D O I：

10.1063/1.2108129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial ferroelectric-ferromagnetic field effect devices of PbZr0.52Ti0.48O3/La0.7Sr0.3MnO3 (PZT/LSMO) with narrow manganite channels (<= 7 nm) show butterflylike hysteretic resistance modulations (Delta R) which are commensurate with strain variation from inverse piezoelectric effect of PZT. Based on the type of observed resistance hysteresis loops, contributions from electric field effect and strain effect have been distinguished for devices with varied channel thickness. The strain-induced Delta R decreases with increasing channel thickness. The Delta R from field effect is low in the LSMO channels with 30% Sr doping. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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