Wide band gap semiconductor alloy:: x(LiGaO2)1/2-(1-x)ZnO

被引：41

作者：

Omata, Takahisa ^{[1
]}

Tanaka, Keizo ^{[1
]}

Tazuke, Atsushi ^{[1
]}

Nose, Katsuhiro ^{[1
]}

Otsuka-Yao-Matsuo, Shinya ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat Sci & Mfg, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 08期

关键词：

D O I：

10.1063/1.2903906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxide semiconductor alloys of x(LiGaO(2))(1/2)-(1-x)ZnO were synthesized by a standard solid state reaction. The wurtzite-type single phases were obtained in the wide composition range of x <= 0.38 because the beta-LiGaO(2) possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The resulting alloys showed characteristics of wide band gap oxide n-type semiconductor; the optical transparency reached over to the ultraviolet (UV) light. The electrical conductivity and energy band gap for 0.38(LiGaO(2))(1/2)-0.62ZnO were 8.2 Omega(-1) cm(-1) and 3.7 eV, respectively, at room temperature. The alloy is a good candidate for the barrier material of the ZnO-based heterostructures and UV-transparent electrodes. (C) 2008 American Institute of Physics.

引用

页数：4

共 13 条

[1] REMEASUREMENT OF STRUCTURE OF HEXAGONAL ZNO [J].

ABRAHAMS, SC ;

BERNSTEIN, JL .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL CRYSTALLOGRAPHY AND CRYSTAL CHEMISTRY, 1969, B 25 :1233-+

[2]

[Anonymous], 1969, REFLECTANCE SPECTROS

[3]

CHO J, 1997, APPL SURF SCI, V113, P705

[4] Enhancement of green photoluminescence from ZnO:Pr powders [J].

Inoue, Yoshihiro ;

Okamoto, Masaki ;

Morimoto, Jun .

JOURNAL OF MATERIALS RESEARCH, 2006, 21 (06) :1476-1483

[5] CRYSTAL STRUCTURE OF LIGAO2 [J].

MAREZIO, M .

ACTA CRYSTALLOGRAPHICA, 1965, 18 :481-&

[6] Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates [J].

Nicholls, JFH ;

Gallagher, H ;

Henderson, B ;

TragerCowan, C ;

Middleton, PG ;

ODonnell, KP ;

Cheng, TS ;

Foxon, CT ;

Chai, BHT .

GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 :535-539

[7] Heteroepitaxial growth of β-LiGaO2 thin films on ZnO [J].

Ohkubo, I ;

Hirose, C ;

Tamura, K ;

Nishii, J ;

Saito, H ;

Koinuma, H ;

Ahemt, P ;

Chikyow, T ;

Ishii, T ;

Miyazawa, S ;

Segawa, Y ;

Fukumura, T ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5587-5589

[8] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

[9] A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].

Ozgür, U ;

Alivov, YI ;

Liu, C ;

Teke, A ;

Reshchikov, MA ;

Dogan, S ;

Avrutin, V ;

Cho, SJ ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103

[10] Wide-band gap oxide alloy: BeZnO [J].

Ryu, YR ;

Lee, TS ;

Lubguban, JA ;

Corman, AB ;

White, HW ;

Leem, JH ;

Han, MS ;

Park, YS ;

Youn, CJ ;

Kim, WJ .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-2

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