Preparation and ferroelectric properties of lanthanum modified Sr0.8Bi2.2Ta2O9 thin films

被引：14

作者：

Zhong, Y ^{[1
]}

Hu, GD ^{[1
]}

Tang, TA ^{[1
]}

机构：

[1] Fudan Univ, Dept Microelect, Shanghai 200433, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 12期

关键词：

ferroelectric thin film; bismuth-layered perovskite; Sr0.8Bi2.2Ta2O9; fatigue; oxygen vacancy;

D O I：

10.1143/JJAP.42.7424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

La modified Sr0.8Bi2.2Ta2O9 (SLBT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. All the films were annealed at 800degreesC using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that single-phase layered perovskite SLBT ferroelectric thin films can be obtained and no secondary phase was found. The crystallization and hysteresis behavior of SLBT films showed a dependence on the La content. An increase Of P-r and decrease of E-c with increasing La concentration were observed. The fatigue properties were found to be improved when more,La was added to SLBT films. The results were discussed with respect to the effects of La3+ and Bi3+ substitution at perovskite A-site.

引用

页码：7424 / 7427

页数：4

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