All silicon infrared photodiodes: photo response and effects of processing temperature

被引：59

作者：

Geis, M. W. ^{[1
]}

Spector, S. J. ^{[1
]}

Grein, M. E. ^{[1
]}

Schulein, R. T. ^{[1
]}

Yoon, J. U. ^{[1
]}

Lennon, D. M. ^{[1
]}

Wynn, C. M. ^{[1
]}

Palmacci, S. T. ^{[1
]}

Gan, F. ^{[2
]}

Kaertner, F. X. ^{[2
]}

Lyszczarz, T. M. ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] MIT, Cambridge, MA 02139 USA

来源：

OPTICS EXPRESS | 2007年 / 15卷 / 25期

关键词：

D O I：

10.1364/OE.15.016886

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475 degrees C. 0.25-mm-long diodes annealed to 300 degrees C have a response to 1539 nm radiation of 0.1 AW(-1) at a reverse bias of 5 V and 1.2 A W-1 at 20 V. 3-mm-long diodes processed to 475 degrees C exhibited two states, L1 and L2, with photo responses of 0.3 +/- 0.1 A W-1 at 5 V and 0.7 +/- 0.2 A W-1 at 20 V for the L1 state and 0.5 +/- 0.2 A W-1 at 5 V and 4 to 20 A W-1 at 20 V for the L2 state. The diodes can be switched between L1 and L2. The bandwidths vary from 10 to 20 GHz. These diodes will generate electrical power from the incident radiation with efficiencies from 4 to 10 %. (C) 2007 Optical Society of America.

引用

页码：16886 / 16895

页数：10

共 23 条

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