Mechanisms of energy dissipation during displacement-sensitive indentation in Ge single crystals at elevated temperatures

被引：18

作者：

Farber, BY ^{[1
]}

Orlov, VI

Nikitenko, VI

Heuer, AH

机构：

[1] Rosemount Analyt Inc, Gas Div, Orrville, OH 44667 USA

[2] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA

[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1998年 / 78卷 / 03期

关键词：

D O I：

10.1080/01418619808241929

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Load-displacement indentation tests have been performed in Ge single crystals on a newly designed displacement-sensitive hardness tester in the temperature range 20-450 degrees C. The deformation substructure in the vicinity of the indentation impressions was investigated using selective etching. The energy dissipated during the loading-unloading indentation cycle has been measured and compared with the extent and the structure of the deformation zone. Mechanisms of plastic flow and fracture during indentation are discussed.

引用

页码：671 / 677

页数：7

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