Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb

被引：77

作者：

Oiwa, A ^{[1
]}

Endo, A

Katsumoto, S

Iye, Y

Ohno, H

Munekata, H

机构：

[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan

[2] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.59.5826

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the magnetic and transport properties of (In,Mn)As thin films grown on a (Ga,Al)Sb layer. Strong perpendicular magnetic anisotropy is observed for the (In,Mn)As layer, the thickness of which is less than the critical value required for relaxation of lattice-mismatch-induced strain. The anomalous Hall coefficient is found to be approximately proportional to the square of resistivity in the low-field region. Large negative magnetoresistance is found to occur over a magnetic field range significantly wider than that for the ferromagnetic hysteresis loop. [S0163-1829 (98)04344-6].

引用

页码：5826 / 5831

页数：6

共 14 条

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