A ferroelectric associative memory technology employing heterogate-FGMOS structure

被引：9

作者：

Kobayashi, D ^{[1
]}

Shibata, T

Fujimori, Y

Nakamura, T

Takasu, H

机构：

[1] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Dept Spacecraft Engn, Kanagawa 2298510, Japan

[2] Univ Tokyo, Sch Frontier Sci, Dept Frontier Informat, Chiba 2778561, Japan

[3] ROHM Co Ltd, Semicond Res & Dev Headquarters, Kyoto 6158585, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 10期

关键词：

analog very large-scale integration (VLSI); associative memories; ferroelectric memories; floating-gate (FG) MOS; neuron MOS; template matching; vector quantization; vMOS;

D O I：

10.1109/TED.2005.856188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ferroelectric Associative memory technology fibs been developed using ferroelectric materials as a mean's of storing template vector information. In order to accommodate the ferroelectric memory cell to associative processing circuits, a heterogate floating-gate MOS structure has been developed. As a result, non-destructive reading of analog data written in the ferroelectric film has been made possible, allowing a wide voltage range of input signals to associative processing circuits. The concept has been experimentally verified using fabricated test devices and, circuits.

引用

页码：2188 / 2197

页数：10

共 42 条

[1]

[Anonymous], 1992, VECTOR QUANTIZATION

[2]

Cauwenberghs G., 1995, Advances in Neural Information Processing Systems 7, P779

[3] A p-channel MOS synapse transistor with self-convergent memory writes [J].

Diorio, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :464-472

[4] A floating-gate MOS learning array with locally computed weight updates [J].

Diorio, C ;

Hasler, P ;

Minch, BA ;

Mead, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (12) :2281-2289

[5] REAL-TIME VIDEO COMPRESSION USING DIFFERENTIAL VECTOR QUANTIZATION [J].

FOWLER, JE ;

ADKINS, KC ;

BIBYK, SB ;

AHALT, SC .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY, 1995, 5 (01) :14-24

[6] Low-temperature crystallization of sol-gel-derived Pb(Zr, Ti)O3 thin films [J].

Fujimori, Y ;

Nakamura, T ;

Takasu, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B) :5346-5349

[7] Properties of ferroelectric memory FET using Sr2(Ta, Nb)2O7 thin film [J].

Fujimori, Y ;

Nakamura, T ;

Kamisawa, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2285-2288

[8]

GENTILE A, 1996, P DAT COMPR C

[9] Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs [J].

Hanyu, T ;

Kimura, H ;

Kameyama, M .

1999 29TH IEEE INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC, PROCEEDINGS, 1999, :30-35

[10] A high-performance ramp-voltage-scan winner-take-all circuit in an open loop architecture [J].

Ito, K ;

Ogawa, M ;

Shibata, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2301-2305

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