Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs

被引：7

作者：

Hanyu, T ^{[1
]}

Kimura, H ^{[1
]}

Kameyama, M ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Informat Sci, Sendai, Miyagi 9808579, Japan

来源：

1999 29TH IEEE INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC, PROCEEDINGS | 1999年

关键词：

D O I：

10.1109/ISMVL.1999.779691

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a design of a non-volatile multiple-valued content-addressable memory (MVCAM) using metal-ferroelectric-semiconductor (MFS) FETs. An MFSFET is an, important device with a non-destructive read scheme. Multiple-valued stored data are directly represented by remnant polarization states that correspond to threshold voltages of an MFSFET. Since one-digit comparison between multiple-valued input and stored data is performed by the combination of two different threshold operations, a one-digit comparator can be designed by two MFSFETs. The use of the one-digit comparator makes it possible to design a compact MVCAM cell. It is evaluated that the performance of the proposed MVCAM is superior to that of some binary and multiple-valued CAMs in, terms of bit density, peripheral-circuit complexity, access speed, and functionality.

引用

页码：30 / 35

页数：6

共 10 条

[1]

FUJII G, 1997, 44 SPRING M JPN SOC, P488

[2] Design of a one-transistor-cell multiple-valued CAM [J].

Hanyu, T ;

Kanagawa, N ;

Kameyama, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (11) :1669-1674

[3] Multiple-valued floating-gate-MOS pass logic and its application to logic-in-memory VLSI [J].

Hanyu, T ;

Teranihi, K ;

Kameyama, M .

1998 28TH IEEE INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC - PROCEEDINGS, 1998, :270-275

[4] FUNCTIONALLY SEPARATED, MULTIPLE-VALUED CONTENT-ADDRESSABLE MEMORY AND ITS APPLICATIONS [J].

HANYU, T ;

ARAGAKI, S ;

HIGUCHI, T .

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1995, 142 (03) :165-172

[5]

HIGUCHI T, 1989, MULTIPLE VALUED DIGI

[6] Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO3/Si (100) structures for nonvolatile memory application [J].

Kim, KH .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (06) :204-206

[7]

MIWA T, 1996, ISSCC, P40

[8] A multiple-valued ferroelectric content-addressable memory [J].

Sheikholeslami, A ;

Gulak, PG ;

Hanyu, T .

1996 26TH INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC, PROCEEDINGS, 1996, :74-79

[9]

WU SY, 1974, IEEE T ELECTRON DEV, VED21, P499

[10] A 288-KB FULLY PARALLEL CONTENT ADDRESSABLE MEMORY USING A STACKED-CAPACITOR CELL STRUCTURE [J].

YAMAGATA, T ;

MIHARA, M ;

HAMAMOTO, T ;

MURAI, Y ;

KOBAYASHI, T ;

YAMADA, M ;

OZAKI, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (12) :1927-1933

← 1 →