Indium stability on InGaAs during atomic H surface cleaning

被引：62

作者：

Aguirre-Tostado, F. S. ^{[1
]}

Milojevic, M. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Vogel, E. M. ^{[1
]}

Wallace, R. M. ^{[1
]}

McDonnell, S. ^{[2
]}

Hughes, G. J. ^{[2
]}

机构：

[1] Univ Texas Dallas, Richardson, TX 75080 USA

[2] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期

基金：

爱尔兰科学基金会;

关键词：

D O I：

10.1063/1.2919047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic H exposure of a GaAs surface at 390 degrees C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situ reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this procedure applied to In0.2Ga0.8As effectively removes the native oxides resulting in an atomically clean surface. However, the bulk InGaAs stoichiometry is not preserved from this treatment. The In:Ga ratio from the substrate is found to decrease by 33%. The implications for high-mobility channel applications are discussed as the carrier mobility increases nearly linearly with the In content. (C) 2008 American Institute of Physics.

引用

页数：3

共 20 条

[1] X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001) [J].