Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells -: art. no. 171905

被引：20

作者：

Morita, K ^{[1
]}

Sanada, H

Matsuzaka, S

Hu, CY

Ohno, Y

Ohno, H

机构：

[1] Japan Sci & Technol Agcy, ERATO, Semicond Spintron Project, Tokyo, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 17期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2112193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropic spin dynamics of two-dimensional electrons in strained n-InGaAs/AlGaAs (110) quantum wells (QWs) is investigated by a time-resolved Faraday rotation technique. Strong anisotropy of the relaxation time for the electron spins in parallel (tau(parallel to)) and perpendicular (tau(perpendicular to)) to the QWs is observed (tau(perpendicular to)/tau(parallel to)similar to 60) at 150 K as a result of the enhanced D'yakonov-Perel' (DP) spin relaxation mechanism. At 5 K, an anisotropic feature of the spin relaxation time is also observed in the presence of in-plane magnetic field, suggesting that the DP mechanism is effective for low-temperature spin relaxation. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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