The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μm technology nodes

被引：18

作者：

Huang, CH ^{[1
]}

Chan, KT ^{[1
]}

Chen, CY ^{[1
]}

Chin, A ^{[1
]}

Huang, GW ^{[1
]}

Tseng, C ^{[1
]}

Liang, V ^{[1
]}

Chen, JK ^{[1
]}

Chien, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年

关键词：

D O I：

10.1109/RFIC.2003.1213965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As scaling down the RF MOSFET from 0.18 to 0.13 mum technology nodes, the f(T) increases but the NFmin becomes worse by increasing similar to0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 mum MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 mum is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.

引用

页码：373 / 376

页数：4

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