Core structure and properties of partial dislocations in silicon carbide p-i-n diodes

被引：77

作者：

Ha, S

Benamara, M

Skowronski, M

Lendenmann, H

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] ABB Corp Res, SE-72178 Vasteras, Sweden

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 24期

关键词：

D O I：

10.1063/1.1633969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in the blocking layer during high current forward biasing. Their bounding partial dislocations showed two distinct characteristics. Bright luminescent segments were mobile while dark invisible ones were stationary during biasing. TEM analysis of their Burgers vectors indicated that the mobile segments were silicon-core 30degrees partial dislocations while the immobile segments were carbon-core 30degrees ones. (C) 2003 American Institute of Physics.

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页码：4957 / 4959

页数：3

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