Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

被引：9

作者：

Chen, MJ ^{[1
]}

Lin, CF

Lee, MH

Chang, ST

Liu, CW

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Grad Inst Electroopt Engn, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 14期

关键词：

D O I：

10.1063/1.1405429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 mus for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm(2). The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. (C) 2001 American Institute of Physics.

引用

页码：2264 / 2266

页数：3

共 17 条

[1] Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFET's [J].