Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

被引：34

作者：

Liu, CW ^{[1
]}

Lee, MH

Chen, MJ

Lin, CF

Chern, MY

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Grad Inst Elect, Taipei, Taiwan

[3] Inst Electroopt Engn, Taipei, Taiwan

[4] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期

关键词：

electroluminescence; metal oxide silicon diode; roughness;

D O I：

10.1109/55.887479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 degreesC, as compared to 1000 degreesC. The x-ray reflectivity revealed that the oxide grown at 900 degreesC has rougher interface than that grown at 1000 degreesC, The role of interface roughness can be understood in a model composed of phonons and interface roughness, An external quantum efficiency of similar to 10(-6) was obtained using Al electrodes.

引用

页码：601 / 603

页数：3

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