On the correlation between surface roughness and inversion layer mobility in Si-MOSFET's

被引：62

作者：

Pirovano, A ^{[1
]}

Lacaita, AL

Ghidini, G

Tallarida, G

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] STMicroelect, I-20041 Agrate Brianza, Italy

[3] Lab MDM, I-20041 Agrate Brianza, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 01期

关键词：

charge carrier mobility; modeling; MOSFET's; semiconductor-insulator interfaces;

D O I：

10.1109/55.817444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A. quantitative analysis of the Si/SiO2 interface roughness based on atomic force microscope (AFM) and mobility measurements is presented. Our results show that the spatial components of the roughness affecting the carrier transport lie outside the range probed by AFM, thus making questionable the validity of previously published correlations between AFM measurements and carrier mobility, Based on a numerical model of the roughness scattering, a new physically-based correlation is proposed, highlighting the impact, so far overlooked, of the roughness correlation length an the carrier mobility.

引用

页码：34 / 36

页数：3

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