DX centres in CdZnTe:Cl and their applications

被引：35

作者：

Thio, T ^{[1
]}

Bennett, JW ^{[1
]}

Chadi, DJ ^{[1
]}

Linke, RA ^{[1
]}

Becla, P ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00681-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

DX centres, far from being undesirable defects, can be very useful: the persistent photoconductivity (PPC) associated with them makes it possible to optically write erasable metallic patterns in an insulating background; potential applications include optical switching and holography. In order to develop room-temperature devices, we study II-VI semiconductors in search of DX centres which can support PPC to 300 K. Measurements of the PC and Hall effect in Cl-doped Cd1-xZnxTe show that Cl donors form two distinct DX states. Only one is apparent for x = 0.20, but for x = 0.28 the transport measurements evince an additional DX-like state into which the photocarriers are metastably captured. In the latter, the PPC persists to 190 K.

引用

页码：345 / 349

页数：5

共 15 条

[1]

[Anonymous], UNPUB

[2] ELECTRICAL AND OPTICAL-PROPERTIES OF P-DOPED AND AS-DOPED CD1-XMNXTE [J].