Interaction of interfacial charge and ferroelectric polarization in a pentacene/poly(vinylidene fluoride-trifluoroethylene) double-layer device

被引：31

作者：

Li, Jun ^{[1
]}

Taguchi, Dai ^{[1
]}

OuYang, Wei ^{[1
]}

Manaka, Takaaki ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; MEMORY APPLICATIONS; FILMS;

D O I：

10.1063/1.3624477

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

A two-step polarization reversal process was identified in the pentacene/poly(vinylidene fluoride-trifluoroethylene) double-layer device. Displacement current measurement showed that three peaks generated non-symmetrically in the current-voltage characteristics. Accordingly, optical electricfield induced second-harmonic generation measurement displayed two hysteresis loops. A proposed model based on a two-step polarization reversal mechanism accounted for these results, and suggested that interaction of interfacial charge and ferroelectric polarization governed the mechanism. The proposed model is useful to explain the reduced remanent polarization in ferroelectric field-effect transistors, and will be helpful for developing organic devices with a ferroelectric layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624477]

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