Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures

被引：49

作者：

Asgari, A ^{[1
]}

Kalafi, M

Faraone, L

机构：

[1] Tabriz Univ, Ctr Appl Phys Res, Tabriz 51664163, Iran

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 03期

关键词：

D O I：

10.1063/1.1635654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article we present a study of the effect that partial occupancy of sub-bands on the two-dimensional electron mobility at different temperatures, using a fully numerical calculation in unintentionally doped AlxGa1-xN/GaN heterostructures with different Al mole fraction in the AlxGa1-xN barrier. The analysis of our results clearly indicates that the effect of partial sub-band occupancy be considerable, especially at higher temperatures and higher Al mole fractions when more than one sub-band is occupied. Comparison of our calculated results with published experimental data shows good agreement. (C) 2004 American Institute of Physics.

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页码：1185 / 1190

页数：6

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