Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

被引：57

作者：

Hirahara, T. ^{[1
]}

Miyamoto, K. ^{[2
]}

Kimura, A. ^{[2
]}

Niinuma, Y. ^{[1
]}

Bihlmayer, G. ^{[3
]}

Chulkov, E. V. ^{[4
,5
]}

Nagao, T. ^{[6
]}

Matsuda, I. ^{[7
]}

Qiao, S. ^{[8
]}

Shimada, K. ^{[8
]}

Namatame, H. ^{[8
]}

Taniguchi, M. ^{[2
,8
]}

Hasegawa, S. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan

[3] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[4] DIPC, San Sebastian 20018, Spain

[5] Univ Basque Country, Dept Fis Mat, San Sebastian 20080, Spain

[6] Natl Inst Mat Sci, Nano Syst Funct Ctr, Tsukuba, Ibaraki 3050044, Japan

[7] Inst Solid State Phys, Chiba 2778581, Japan

[8] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan

来源：

NEW JOURNAL OF PHYSICS | 2008年 / 10卷

关键词：

D O I：

10.1088/1367-2630/10/8/083038

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

Following our previous work (Hirahara T et al 2007 Phys. Rev. B 76 153305), we have performed spin- and angle-resolved photoemission measurements at similar to 120K on ultrathin Bi films grown on a Si substrate, focusing on the split surface-state bands near the Fermi level. We found clear experimental evidence that these states show Rashba-type spin-split behavior near (Gamma) over bar, but the splitting is lost near (M) over bar M where they overlap with the bulk band projection. This can be explained as a change in the origin of the splitting from a Rashba effect to a parity effect as revealed by ab initio calculations.

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页数：12

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