Ionisation and trapping of hydrogen at SiO2 interfaces

被引：14

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 58卷 / 1-2期

关键词：

silicon; hydrogen; interfaces; surface ionization; fixed charge;

D O I：

10.1016/S0921-5107(98)00275-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Annealing of interfaces between SiO2 and (111)Si, (100)Si in H-2 in the temperature range 450-800 degrees C is found to introduce a considerable density (up to 10(13) cm(-2)) of positively charged centres. There is no comparable density of dangling bonds initially present nor generated during the annealing at the Si/SiO2 interfaces or in the SiO2 layer that could account for the observed hydrogen bonding. Therefore, the hydrogen is suggested to be trapped in the positively charged valence alternation state 3-fold coordinated oxygen resembling the well known hydronium ion (H3O)(+). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：56 / 59

页数：4

相关论文

共 15 条

[1] Hydrogen-induced valence alternation state at SiO2 interfaces [J].

Afanas'ev, VV ;

Stesmans, A .

PHYSICAL REVIEW LETTERS, 1998, 80 (23) :5176-5179

[2] Positively charged bonded states of hydrogen at the (111)Si/SiO2 interface [J].

Afanas'ev, VV ;

Stesmans, A .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (01) :89-93

[3] Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing [J].

Afanas'ev, VV ;

Stesmans, A .

APPLIED PHYSICS LETTERS, 1998, 72 (01) :79-81

[4]

Conway B.E., 1981, Ionic Hydration in Chemistry and Biophysics

[5]

DEAL BE, 1974, J ELECTROCHEM SOC RE, V121, pC199

[6] HYDROGEN-INDUCED DONOR-TYPE SI/SIO2 INTERFACE STATES [J].

DENIJS, JMM ;

DRUIJF, KG ;

AFANAS'EV, VV ;

VANDERDRIFT, E ;

BALK, P .

APPLIED PHYSICS LETTERS, 1994, 65 (19) :2428-2430

[7] INTERACTION OF H AND H-2 WITH THE SILICON DANGLING ORBITAL AT THE (111) SI/SIO2 INTERFACE [J].

EDWARDS, AH .

PHYSICAL REVIEW B, 1991, 44 (04) :1832-1838

[8] INTERACTION OF HYDROGENATED MOLECULES WITH INTRINSIC DEFECTS IN A-SIO2 [J].

EDWARDS, AH ;

GERMANN, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4) :238-247

[9] DEPASSIVATION OF DAMP-OXIDE PB CENTERS BY THERMAL AND ELECTRIC-FIELD STRESS [J].

GERARDI, GJ ;

POINDEXTER, EH ;

HARMATZ, M ;

WARREN, WL ;

NICOLLIAN, EH ;

EDWARDS, AH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (12) :3765-3770

[10] HYDROGEN-BONDING ARRANGEMENTS AT SI-SIO2 INTERFACES [J].

JING, Z ;

LUCOVSKY, G ;

WHITTEN, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1613-1617