Positively charged bonded states of hydrogen at the (111)Si/SiO2 interface

被引：2

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 01期

关键词：

D O I：

10.1088/0953-8984/10/1/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Annealing of thermal (111)Si/SiO2 in hydrogen in the temperature range 450-800 degrees C is found to introduce a considerable density (up to 10(13) cm(-2)) of positively charged centres, ascribed to H bonding. However, there is no comparable density of dangling bonds initially present nor generated at the Si/SiO2 interface that could account for the observed hydrogen bonding. The hydrogen is suggested to be trapped in the positively charged valence-alternation state-threefold-coordinated oxygen-resembling the well known hydronium ion (H3O)(+). The activation energy of dissociation of this state was found to be about 2.4 eV.

引用

页码：89 / 93

页数：5

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