Positively charged bonded states of hydrogen at the (111)Si/SiO2 interface

被引：2

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 01期

关键词：

D O I：

10.1088/0953-8984/10/1/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Annealing of thermal (111)Si/SiO2 in hydrogen in the temperature range 450-800 degrees C is found to introduce a considerable density (up to 10(13) cm(-2)) of positively charged centres, ascribed to H bonding. However, there is no comparable density of dangling bonds initially present nor generated at the Si/SiO2 interface that could account for the observed hydrogen bonding. The hydrogen is suggested to be trapped in the positively charged valence-alternation state-threefold-coordinated oxygen-resembling the well known hydronium ion (H3O)(+). The activation energy of dissociation of this state was found to be about 2.4 eV.

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页码：89 / 93

页数：5

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共 22 条

[11] HYDROGEN-BONDING ARRANGEMENTS AT SI-SIO2 INTERFACES [J].

JING, Z ;

LUCOVSKY, G ;

WHITTEN, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1613-1617

[12] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[13] SPECTROSCOPIC EVIDENCE FOR VALENCE-ALTERNATION-PAIR DEFECT STATES IN VITREOUS SIO2 [J].

LUCOVSKY, G .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (06) :513-530

[14] CHEMICAL-REACTIONS OF HYDROGENOUS SPECIES IN THE SI/SIO2 SYSTEM [J].

POINDEXTER, EH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 :257-263

[15] EFFECT OF POST-OXIDATION ANNEAL TEMPERATURE ON RADIATION-INDUCED CHARGE TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

SCHWANK, JR ;

FLEETWOOD, DM .

APPLIED PHYSICS LETTERS, 1988, 53 (09) :770-772

[16] POSTIRRADIATION CRACKING OF H2 AND FORMATION OF INTERFACE STATES IN IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

STAHLBUSH, RE ;

EDWARDS, AH ;

GRISCOM, DL ;

MRSTIK, BJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) :658-667

[17] Creation of P-b interface defects in thermal Si/SiO2 through annealing [J].

Stesmans, A ;

Afanas'ev, VV .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (36) :L505-L509

[18] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

STREET, RA ;

MOTT, NF .

PHYSICAL REVIEW LETTERS, 1975, 35 (19) :1293-1296

[19] COMBINED ELECTRON-SPIN-RESONANCE AND CAPACITANCE-VOLTAGE ANALYSIS OF HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED SIO2 [J].

VANHEUSDEN, K ;

STESMANS, A ;

AFANAS'EV, VV .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2419-2424

[20] Mechanism for anneal-induced interfacial charging in SiO2 thin films on Si [J].

Warren, WL ;

Vanheusden, K ;

Schwank, JR ;

Fleetwood, DM ;

Winokur, PS ;

Devine, RAB .

APPLIED PHYSICS LETTERS, 1996, 68 (21) :2993-2995