EFFECT OF POST-OXIDATION ANNEAL TEMPERATURE ON RADIATION-INDUCED CHARGE TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES

被引：67

作者：

SCHWANK, JR

FLEETWOOD, DM

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：770 / 772

页数：3

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