2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications

被引：239

作者：

Lee, Myoung-Jae ^{[1
]}

Park, Youngsoo ^{[1
]}

Kang, Bo-Soo ^{[1
]}

Ahn, Seung-Eon ^{[1
]}

Lee, Changbum ^{[1
]}

Kim, Kihwan ^{[1
]}

Xianyu, Wenxu ^{[1
]}

Stefanovich, G. ^{[1
]}

Lee, Jung-Hyun

Chung, Seok-Jae ^{[2
]}

Kim, Yeon-Hee ^{[2
]}

Lee, Chang-Soo ^{[2
]}

Park, Jong-Bong ^{[3
,4
]}

Baek, In-Gyu

Yoo, In-Kyeong ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, San 14-1, Yongin 446712, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Nano Fabricat Technol Ctr, Yongin 446712, Gyeonggi Do, South Korea

[3] Samsung Adv Inst Technol, Anal Engn Ctr, Yongin 446712, Gyeonggi Do, South Korea

[4] Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Proc Dev Team, Yongin 446712, Gyeonggi Do, South Korea

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have successfully integrated a 2-stack 8x8 array 1D-1R(one diode-one resistor) structure with 0.5umx0.5um cells in order to demonstrate the feasibility of high density stacked RRAM. p-CuOx/n-InZnOx heterojunction thin film was used for the first time as a oxide diode which shows increased current density of two orders over our previous p-NiOx/n-TiOx oxide diode. And Ti-doped NiO was used for the storage node. No limitation to the number of stacks has been observed from our results. Cell and device properties of our cross-point structure 8x8 array are reported. In addition, all fabrication processes were done at room temperature without other dedicated facilities or processes allowing for compatibility with current CMOS technology. Bi-stable switching for 1D-1R memory was demonstrated for our 2-stack cross-point structures showing excellent behavior for both diode and storage nodes. The forward current density for p-CuOx/n-IZO(x) diodes was over 10(4)A/cm(2), and the operation voltage for the storage node with diode attached was around 3V.

引用

页码：771 / +

页数：3

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