Yellow luminescence and related deep levels in unintentionally doped GaN films

被引：137

作者：

Shalish, I ^{[1
]}

Kronik, L

Segal, C

Rosenwaks, Y

Shapira, Y

Tisch, U

Salzman, J

机构：

[1] Tel Aviv Univ, Dept Phys Elect, IL-69978 Ramat Aviv, Israel

[2] Technion Israel Inst Technol, Dept Elect Engn, Inst Solid State, IL-32000 Haifa, Israel

[3] Technion Israel Inst Technol, Ctr Microelect Res, IL-32000 Haifa, Israel

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.59.9748

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deep level energy distribution associated with the well-known "yellow luminescence" in GaN is studied by means of two complementary deep level techniques: photoluminescence and surface photovoltage spectroscopy. The combined experimental results show that the yellow luminescence is due to capture of conduction band electrons, or electrons from shallow donors (with a maximum depth on the order of the thermal energy) by a deep acceptor level with a broad energy distribution, centered at similar to 2.2 eV below die conduction band edge. In addition, the results show that the density of yellow luminescence related states possesses a significant surface component. [S0163-1829(99)16215-5].

引用

页码：9748 / 9751

页数：4

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