The effects of implantation temperature on He bubble formation in silicon

被引：10

作者：

da Silva, DL

Fichtner, PFP

Peeva, A

Behar, M

Koegler, R

Skorupa, W

机构：

[1] Univ Fed Rio Grande Sul, Dept Met, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[3] Res Ctr Rossendorf, Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 175卷

关键词：

defects; voids; ion implantation; radiation effects; helium; silicon;

D O I：

10.1016/S0168-583X(00)00567-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In the present contribution, we report experimental results on the formation of He-induced cavities in Ct grown (1 0 0) Si samples implanted with 40 keV He+ ions to a fluence of 1 x 10(16) cm(-2) at four implantation temperatures, 77, 133, 233 and 300 K, and submitted to rapid thermal annealing at 1073 K for 600 s. The as-implanted samples were analyzed by Rutherford backscattering/channeling spectrometry (RBS/C) and the annealed ones by transmission electron microscopy (TEM). The results obtained show that the characteristics of the produced cavity systems depends significantly on the implantation temperature. A correlation between the dynamic annealing behavior and the bubble nucleation process is proposed. (C) 2001 Elsevier Science B.V. All rights reserved.

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收藏

页码：335 / 339

页数：5

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