Study of structural changes in krypton implanted silicon

The structural changes induced in single crystal silicon implanted with krypton above the amorphisation threshold were studied by X-ray reflectivity together with grazing incidence small angle X-ray scattering technique. Silicon samples were implanted with krypton with two different ion energies. A well-defined layer of amorphous silicon, 220 nm thick, rich in krypton, was detected. below the top, less disturbed layer. The studied series of samples consists, of as-implanted, relaxed and several samples with increased level of defects induced by additional Kr implantation. Additional implantation caused changes in layers structure and thickness, which was well evidenced in X-ray reflectivity, while only minor changes of surface roughness and critical angle were detected in GISAXS spectra. (C) 2003 Elsevier B.V. All rights reserved.