EPR study of a-Si structural relaxations

被引：5

作者：

Pivac, B

Rakvin, B

Reitano, R

机构：

[1] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia

[2] Ist Nazl Fis Mat, Unita Catania, I-95129 Catania, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期

关键词：

amorphous silicon; ion beam amorphisation; structural relaxation; electron paramagnetic resonance;

D O I：

10.1016/S0168-583X(98)00537-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A detailed analysis of the EPR line-shape was performed on amorphous silicon (a-Si) samples obtained by Kr+ ion implantation. It is shown that the line has predominantly Lorentzian character, however, a small Gaussian component is present as well. We monitored line-shape behavior during the relaxation and subsequent derelaxation process. A strong, fourfold increase in Gaussian component has been observed upon structural relaxation, suggesting spin homogenization throughout the bulk. Subsequent ion implantation derelaxation caused gradual return of the Lorentzian character, i.e. cluster structure of the amorphous phase. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：132 / 135

页数：4

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