Discontinuous tracks in relaxed Si0.5Ge0.5 alloy layers:: A velocity effect

被引：28

作者：

Gaiduk, PI

Larsen, AN

Hansen, JL

Trautmann, C

Toulemonde, M

机构：

[1] Univ Aarhus, Dept Phys & Astron, DK-8000 Aarhus, Denmark

[2] Gesell Schwerionenforsch mbH, D-64291 Darmstadt, Germany

[3] Ctr Interdisciplinaire Rech Ions Lourds, F-14070 Caen, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1605240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain-relaxed crystalline Si0.5Ge0.5 layers were irradiated with U ions of various energies (0.8-2.64 GeV) but of approximately identical electronic stopping power. Transmission electron microscopy reveals tracks of different morphology depending on the velocity of the projectiles. For decreasing beam energy, individual dotted defect structures form aligned discontinuous tracks including a large number of dislocation loops. No indication for track amorphization is found. (C) 2003 American Institute of Physics.

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页码：1746 / 1748

页数：3

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