Preparation of high quality RuO2 electrodes for high dielectric thin films by low pressure metal organic chemical vapor deposition

Pure and conducting RuO2 thin films were deposited on a Si substrate at 250-450 degrees C using Ru(C11H19O2)(3) as a precursor by low pressure metal organic chemical vapor deposition (MOCVD). Ar a lower deposition temperature, the smoother and denser RuO2 thin films were deposited. The amount of O-2 addition did not seriously affect the properties of the RuO2 thin film. The RuO2 thin films which were crack free and well adhered onto the substrates showed very low resistivity of 45-60 mu Omega cm. At a lower deposition temperature and a smaller amount of O-2 addition, RuO2 thin films showed better step coverage, indicating that MOCVD RuO2 thin films from Ru(C11H19O2)(3) can be applied for an electrode of high dielectric thin films fur a capacitor of ultralarge scale integrated dynamic random access memory. (C) 1998 American Vacuum Society. [S0734-2101(98)05205-1].