Effect of hydrogenation on Al-related photoluminescence in 6H-SiC

被引：14

作者：

Koshka, Y ^{[1
]}

Mazzola, MS ^{[1
]}

机构：

[1] Mississippi State Univ, Dept Elect & Comp Engn, Mississippi State, MS 39762 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1391403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interaction of hydrogen with Al acceptors in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching system. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in relative intensity of Al bound exciton (Al-BE) PL. A gradual quenching of the remaining Al-BE photoluminescence is observed in hydrogenated samples under excitation with above band gap light, resulting in a complete disappearance of Al-BE PL emission. High-temperature annealing completely restores the shape of the PL spectrum to its prehydrogenation form. (C) 2001 American Institute of Physics.

引用

页码：752 / 754

页数：3

共 12 条

[1] Hydrogen passivation of silicon carbide by low-energy ion implantation [J].

Achtziger, N ;

Grillenberger, J ;

Witthuhn, W ;

Linnarsson, MK ;

Janson, MS ;

Svensson, BG .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :945-947

[2] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1962, 127 (06) :1868-&

[3] ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC [J].

CLEMEN, LL ;

DEVATY, RP ;

MACMILLAN, MF ;

YOGANATHAN, M ;

CHOYKE, WJ ;

LARKIN, DJ ;

POWELL, JA ;

EDMOND, JA ;

KONG, HS .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2953-2955

[4]

CLEMEN LL, 1994, I PHYS C SER, V137, P227

[5] RECOMBINATION-ENHANCED DEFECT REACTIONS STRONG NEW EVIDENCE FOR AN OLD CONCEPT IN SEMICONDUCTORS [J].

DEAN, PJ ;

CHOYKE, WJ .

ADVANCES IN PHYSICS, 1977, 26 (01) :1-30

[6] HYDROGEN PASSIVATION OF DONORS AND ACCEPTERS IN SIC [J].

GENDRON, F ;

PORTER, LM ;

PORTE, C ;

BRINGUIER, E .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1253-1255

[7]

HENRY A, 1998, MATER SCI FORUM, V338, P651

[8]

Hülsen C, 2000, MATER SCI FORUM, V338-3, P929, DOI 10.4028/www.scientific.net/MSF.338-342.929

[9] Activation of luminescence in polycrystalline silicon thin films by ultrasound treatment [J].

Koshka, J ;

Ostapenko, S ;

Ruf, T ;

Zhang, JM .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2537-2539

[10] HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY [J].

LARKIN, DJ ;

SRIDHARA, SG ;

DEVATY, RP ;

CHOYKE, WJ .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :289-294

← 1 2 →